Edition: 3
Release: 2010-09-24
Publisher: Oxford University Press, USA
Binding: Hardcover
ISBN/ASIN: 0195170156
Operation and Modeling of the MOS Transistor (Oxford Series in Electrical and Computer Engineering)Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Free download Operation and Modeling of the MOS Transistor books collection in PDF, EPUB, FB2, MOBI, and TXT formats. E Best deals ebooks download Operation and Modeling of the MOS Transistor on amazon.tensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
New to this edition:
* Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner
* Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage
* Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise
* New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability
* A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design
* Extensively updated bibliography
* An accompanying website includes additional details not covered in the text, as well as model computer code Operation and Modeling of the MOS Transistor (Oxford Series in Electrical and Computer Engineering) with free ebook downloads available via rapidshare, mediafire, 4shared, and hotfile.
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